Transistors KT872A silicon mesaplanar structures n-p-n pulse. Designed for use in the final cascades of line scanning TVs. KT872A: Structure of the transistor: n-p-n; Рк т max - Constant dissipated collector power with heat sink: 100 W; fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 7 MHz; Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 6 V; Iк max - Maximum permissible constant collector current: 8 A; Iк and max - Maximum permissible collector pulse current: 15 A; Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 1 mA (1500V); h21e - Static transistor current transfer for circuits with common emitter: more than 6; Sk - Collector junction capacity: not more than 125 pF; Rke us - Resistance of saturation between the collector and emitter: not more than 0.22 Ohm; tas - Resolving time: no more than 7500 ns