Transistors 2T975A silicon epitaxial-planar structures n-p-n generator. Designed for use in pulsed mode in amplifiers and generators in the frequency range 1.4 ... 1.6 GHz in a circuit with a common base. Ikmax = 15 A Uкб max = 50 V UeB = 3 V Pk = 500 W Iкб0 = 50 мА gain of 6dB power transistor