●KP956B Transistor silicon USSR 20 pcs ●If you cant find the item you need, you may contact us.
Description
KP956B Structure of N-FET Maximum drain-source voltage Uc, V 200 V Maximum gate-to-source voltage UZi max, V 2 V The slope of the characteristic S, mA / V 100 mA / V Maximum drain current Ic max at 25C, mA 0.05 mA