●Transistors silicon KP958G USSR 4 pcs ●If you cant find the item you need, you may contact us.
Description
KP958G The structure of n-fet Maximum drain-source voltage Uci, V 20 Maximum drain-source current at 25 ° C max. A 20 Resistance of the channel in the open state Rc on, mΩ 0.02 Max. Power dissipation PSI max. W 70