Transistors KT626G silicon epitaxial planar structure pnp. Designed for use in amplifiers and generators of short-range and switching devices. KT626G: The structure of transistor: pnp; Pk max - Constant collector power dissipation: 6.5 W; fgr - Cutoff frequency of current transfer ratio of the transistor for the circuit with common emitter: not less than 75 MHz; Ukbo max - The maximum collector-base voltage for a given reverse current collector and emitter open circuit: 45 V; Uebo max - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit 4; Ik max - The maximum permissible continuous collector current of 500 mA; Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and emitter open output: less than 150 mA (30 V); h21e - Static current transfer ratio of the transistor circuit for a common-emitter: 15 ... 60; CK - Capacity of the collector junction: not more than 150 pF; Rke us - saturation resistance between the collector and emitter: no more than 2 ohms; tc - time constant of the feedback loop at high frequency: less than 500 ps