1T906A germanium transistors diffusion-alloyed structure pnp switching. Designed for use in voltage regulators, switching and pulse amplifier stages of electronic devices. The main technical characteristics of the transistor 1T906A: Structure: p-n-p Pk t max - Dissipated power collector with heat: 15 W; fgr - Cut-off frequency of the transistor current gain for the common-emitter and common-base: not less than 30 MHz; Ukbo samples - Breakdown voltage collector-base for a given reverse current collector and emitter open circuit: 75 V; Uebo samples - Breakdown voltage emitter-base junction reverse current at a given emitter and collector open circuit: 1.4 V; Ik max - Maximum DC Collector Current: 6 A; Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: no more than 8 mA; h21E - Static current transfer ratio for the common-emitter large-signal: 30 ... 150; tc - time constant of the feedback loop at high frequency: up to 5000 ps