Feature



Description

Bilayer Graphene Film on SiO2/Si Substrate 10 mm x 10 mm (non AB Bernal stacking)

The bilayer graphene film product consists of two CVD layers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.

SKU# ME0615

GRAPHENE FILM

• Transparency: > 97 %
• Coverage: > 95%
• Thickness (theoretical): 0.345 nm
• Sheet Resistance: 188 +/- 3 Ohm/sq (1cm x1cm)
• Grain size: Up to 20 um

SUBSTRATE SiO2/Si

• Dry Oxide Thickness: 300 nm (+/-5%)
• Type/Dopant: P/Bor
• Orientation: <100>
• Resistivity: 1-10 ohm-cm
• Thickness: 525 +/- 20 um
• Front surface: Single Side Polished
• Back Surface: Etched
• Particles: <10 @ 0.3 um

QUALITY CONTROL

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene. Each batch must pass the following tests:

• Raman Spectroscopy: I(G)/I(2D)<0.7; I(D)/I(G)<0.05
• Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

APPLICATIONS

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS

PUBLICATIONS

Recent advances in graphene-based biosensors, 2011; doi: 10.1016/j.bios.2011.05.039. Optical nano-imaging of gate-tunable graphene plasmons¨, Nature 487, 77-81 (05 July 2012), vol. 487, page 77, doi: 10.1038/nature11254

"Graphene Frequency Multipliers", Electron Device Letters, IEEE, vol. 30, Issue:5; doi: 10.1109/LED.2009.2016443

Imaging propagating and localized