Feature

●Through Hole Package
●2N5401 2N5551 are complementary silicon transistors
●High collector breakdown voltage （2N5551): VCBO = 180V, VCEO = 160V
●High voltage application
●NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability


Description

The 2N5401（PNP），2N5551（NPN）are complementary sllicon planar epitaxial transistors intended for general purpose high voltage amplifier and switching applicattons.
Package Including
100pcs(50pcs 2N5401+50pcs 2N5551)